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| Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION With TO-3PN package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions. High voltage ignition coil driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 15 30 1 5 155 175 -65~175 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 0.97 UNIT ae /W Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACT ERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1 A ;IB=0;L=10mH IC=8A; IB=0.1 A IC=10A; IB=0.25 A IC=12A; IB=0.3 A IC=8A; IB=0.1 A IC=10A; IB=0.25 A IC=12A; IB=0.3 A VCE =500V; VBE=0; Tj=125ae VCE =450V; IB=0; Tj=125ae VEB=5V; IC=0 IC=5A ; VCE=10V IF=10A 300 MIN 400 TYP. BU941P SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBEsat-3 ICES ICEO IEBO hFE VF MAX UNIT V 1.6 1.8 2.0 2.2 2.5 2.7 0.1 0.5 0.1 0.5 20 V V V V V V mA mA mA 2.5 V 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE BU941P Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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